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Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor (2014)

First Author: Brown R

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201300179

Publication URI: http://dx.doi.org/10.1002/pssc.201300179

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 3-4