Electrical and physical characterization of the Al2O3/ p -GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments (2014)

First Author: Peralagu U

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4899123

Publication URI: http://dx.doi.org/10.1063/1.4899123

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 16