A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT (2014)

First Author: Brown R

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2014.2334394

Publication URI: http://dx.doi.org/10.1109/led.2014.2334394

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 9