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Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2. (2012)

First Author: Melitz W

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4704126

PubMed Identifier: 22519342

Publication URI: http://europepmc.org/abstract/MED/22519342

Type: Journal Article/Review

Volume: 136

Parent Publication: The Journal of chemical physics

Issue: 15

ISSN: 0021-9606