Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2. (2012)
Attributed to:
III-V MOSFETs for Ultimate CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4704126
PubMed Identifier: 22519342
Publication URI: http://europepmc.org/abstract/MED/22519342
Type: Journal Article/Review
Volume: 136
Parent Publication: The Journal of chemical physics
Issue: 15
ISSN: 0021-9606