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Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors (2012)

First Author: Paterson G

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4720940

Publication URI: http://dx.doi.org/10.1063/1.4720940

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 10