Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors (2012)
Attributed to:
III-V MOSFETs for Ultimate CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4720940
Publication URI: http://dx.doi.org/10.1063/1.4720940
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 10