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A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III-V Metal-Oxide-Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF 6 /C 4 F 8 (2012)

First Author: Li X

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1143/jjap.51.01ab01

Publication URI: http://dx.doi.org/10.1143/jjap.51.01ab01

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 1S