A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III-V Metal-Oxide-Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF 6 /C 4 F 8 (2012)
Attributed to:
III-V MOSFETs for Ultimate CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1143/jjap.51.01ab01
Publication URI: http://dx.doi.org/10.1143/jjap.51.01ab01
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 1S