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Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric (2011)

First Author: Bentley S

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2011.2107876

Publication URI: http://dx.doi.org/10.1109/led.2011.2107876

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 4