Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric (2011)
Attributed to:
III-V MOSFETs for Ultimate CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2011.2107876
Publication URI: http://dx.doi.org/10.1109/led.2011.2107876
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 4