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Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics (2011)

First Author: Paterson G

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3631076

Publication URI: http://dx.doi.org/10.1063/1.3631076

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 5