Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics (2011)
Attributed to:
III-V MOSFETs for Ultimate CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3631076
Publication URI: http://dx.doi.org/10.1063/1.3631076
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 5