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Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses (2011)

First Author: Paterson G

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3665720

Publication URI: http://dx.doi.org/10.1063/1.3665720

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 11