Dry etching device quality high-? GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs (2010)

First Author: Li X

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2009.11.011

Publication URI: http://dx.doi.org/10.1016/j.mee.2009.11.011

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering

Issue: 5-8