Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs (2009)

First Author: Ayubi-Moak J

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2009.03.024

Publication URI: http://dx.doi.org/10.1016/j.mee.2009.03.024

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering

Issue: 7-9