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Stark shift and field ionization of arsenic donors in 28Si-silicon-on-insulator structures (2014)

First Author: Lo C

Attributed to: Materials World Network: Spin entanglement using transient electrons in C and Si-based materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4876175

Publication URI: http://dx.doi.org/10.1063/1.4876175

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 19