Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28 (2012)
Attributed to:
Materials World Network: Spin entanglement using transient electrons in C and Si-based materials
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4704561
Publication URI: http://dx.doi.org/10.1063/1.4704561
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 17