Isotope effect on the lifetime of the 2 p 0 state in phosphorus-doped silicon (2013)
Attributed to:
Far Infra-Red Emission and Lasing in Doped Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.88.035201
Publication URI: http://dx.doi.org/10.1103/physrevb.88.035201
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 3