Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy (2013)

First Author: Astrov Y
Attributed to:  Far Infra-Red Emission and Lasing in Doped Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1134/s1063782613020048

Publication URI: http://dx.doi.org/10.1134/s1063782613020048

Type: Journal Article/Review

Parent Publication: Semiconductors

Issue: 2