📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Silicon as a model ion trap: Time domain measurements of donor Rydberg states (2008)

First Author: Vinh N

Attributed to: Far Infra-Red Emission and Lasing in Doped Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1073/pnas.0802721105

Publication URI: http://dx.doi.org/10.1073/pnas.0802721105

Type: Journal Article/Review

Parent Publication: Proceedings of the National Academy of Sciences

Issue: 31