Silicon as a model ion trap: Time domain measurements of donor Rydberg states (2008)

First Author: Vinh N
Attributed to:  Far Infra-Red Emission and Lasing in Doped Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1073/pnas.0802721105

Publication URI: http://dx.doi.org/10.1073/pnas.0802721105

Type: Journal Article/Review

Parent Publication: Proceedings of the National Academy of Sciences

Issue: 31