Boron d-doped (111) diamond solution gate field effect transistors. (2012)
Attributed to:
Delta-doped diamond structures for high performance electronic devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.bios.2011.12.044
PubMed Identifier: 22317833
Publication URI: http://europepmc.org/abstract/MED/22317833
Type: Journal Article/Review
Volume: 33
Parent Publication: Biosensors & bioelectronics
Issue: 1
ISSN: 0956-5663