On the Schottky Barrier Height Lowering Effect of Ti3SiC2 in Ohmic Contacts to P-Type 4H-SiC (2014)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.14331/ijfps.2014.330071
Publication URI: http://dx.doi.org/10.14331/ijfps.2014.330071
Type: Journal Article/Review
Parent Publication: International Journal of Fundamental Physical Sciences
Issue: 3