The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy (2009)

First Author: Bourlange A
Attributed to:  Nitride Photovoltaic Materials for Full Spectrum Utilization funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3153966

Publication URI: http://dx.doi.org/10.1063/1.3153966

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 1