Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers (2012)
Attributed to:
Nitride Photovoltaic Materials for Full Spectrum Utilization
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2012.07.040
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2012.07.040
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth