Molecular-beam epitaxy and lattice parameter of GaN x Sb 1- x : deviation from Vegard's law for x > 0.02 (2013)
Attributed to:
Nitride Photovoltaic Materials for Full Spectrum Utilization
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/46/26/264003
Publication URI: http://dx.doi.org/10.1088/0022-3727/46/26/264003
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 26