Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature (2014)
Attributed to:
Nitride Photovoltaic Materials for Full Spectrum Utilization
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4868091
Publication URI: http://dx.doi.org/10.1063/1.4868091
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 11