Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers (2014)

First Author: Waheeda S
Attributed to:  Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.apsusc.2014.08.186

Publication URI: http://dx.doi.org/10.1016/j.apsusc.2014.08.186

Type: Journal Article/Review

Parent Publication: Applied Surface Science