Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation (2015)

First Author: Brazzini T
Attributed to:  GaN Electronics: RF Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4921848

Publication URI: http://dx.doi.org/10.1063/1.4921848

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 21