Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence (2015)
Attributed to:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4907261
Publication URI: http://dx.doi.org/10.1063/1.4907261
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 4