Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence (2015)

First Author: Sun H
Attributed to:  GaN Electronics: RF Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4907261

Publication URI: http://dx.doi.org/10.1063/1.4907261

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 4