Towards modelling realistic ageing rates of amorphous silicon devices in operational environment (2015)

First Author: Zhu J

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.7567/jjap.54.08kg03

Publication URI: http://dx.doi.org/10.7567/jjap.54.08kg03

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 8S1