The effect of the collector contact design on the performance and yield of 800V Lateral IGBTs for power ICs (2015)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ispsd.2015.7123419
Publication URI: http://dx.doi.org/10.1109/ispsd.2015.7123419
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4799-6259-4