Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors (2015)

First Author: Antoniou M

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/LED.2015.2433894

Publication URI: http://dx.doi.org/10.1109/LED.2015.2433894

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 8