Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs (2015)

First Author: Bonyadi R
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/icpe.2015.7167839

Publication URI: http://dx.doi.org/10.1109/icpe.2015.7167839

Type: Conference/Paper/Proceeding/Abstract