Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C (2014)

First Author: Thomas S
Attributed to:  HubNet: Research Leadership and Networking for Energy Networks funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jeds.2014.2330737

Publication URI: http://dx.doi.org/10.1109/jeds.2014.2330737

Type: Journal Article/Review

Parent Publication: IEEE Journal of the Electron Devices Society

Issue: 5