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Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy (2015)

First Author: Zhu T

Attributed to: Study of semi-polar and non-polar nitride based structures for opto-electronic device applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.spmi.2015.10.001

Publication URI: http://dx.doi.org/10.1016/j.spmi.2015.10.001

Type: Journal Article/Review

Parent Publication: Superlattices and Microstructures