Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy (2015)
Attributed to:
Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.spmi.2015.10.001
Publication URI: http://dx.doi.org/10.1016/j.spmi.2015.10.001
Type: Journal Article/Review
Parent Publication: Superlattices and Microstructures