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A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor (2015)

First Author: Cho S

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2015.04.067

Publication URI: http://dx.doi.org/10.1016/j.mee.2015.04.067

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering