Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8eV for solar energy conversion devices (2011)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2010.11.064
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.11.064
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 1