InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy (2015)
Attributed to:
Gallium nitride enabled hybrid and flexible photonics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4930880
Publication URI: http://dx.doi.org/10.1063/1.4930880
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 11