Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations (2015)
Attributed to:
Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2015.06.094
Publication URI: http://dx.doi.org/10.1016/j.microrel.2015.06.094
Type: Journal Article/Review
Parent Publication: Microelectronics Reliability
Issue: 9-10