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Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations (2015)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2015.06.094

Publication URI: http://dx.doi.org/10.1016/j.microrel.2015.06.094

Type: Journal Article/Review

Parent Publication: Microelectronics Reliability

Issue: 9-10