📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations (2015)

First Author: Gerrer L

Attributed to: Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2015.06.094

Publication URI: http://dx.doi.org/10.1016/j.microrel.2015.06.094

Type: Journal Article/Review

Parent Publication: Microelectronics Reliability

Issue: 9-10