Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling (2015)
Attributed to:
Ultra short gate length diamond FETs for high power/high frequency applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4915297
Publication URI: http://dx.doi.org/10.1063/1.4915297
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 10