Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP (2015)
Attributed to:
InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4922590
Publication URI: http://dx.doi.org/10.1063/1.4922590
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 23