Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP (2015)

First Author: Wheatley R
Attributed to:  InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4922590

Publication URI: http://dx.doi.org/10.1063/1.4922590

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 23