The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs (2015)

First Author: Jahdi S
Attributed to:  Underpinning Power Electronics 2012: Components Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tie.2014.2326999

Publication URI: http://dx.doi.org/10.1109/tie.2014.2326999

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Industrial Electronics

Issue: 1