Microstructural dependency of optical properties of m -plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates (2015)
Attributed to:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4928723
Publication URI: http://dx.doi.org/10.1063/1.4928723
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 8