Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers (2015)
Attributed to:
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/30/9/094008
Publication URI: http://dx.doi.org/10.1088/0268-1242/30/9/094008
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 9