Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(0 0 1) substrate (2015)
Attributed to:
Spintronic device physics in Si/Ge Heterostructures.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2015.01.012
Publication URI: http://dx.doi.org/10.1016/j.sse.2015.01.012
Type: Journal Article/Review
Parent Publication: Solid-State Electronics